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Biosketch
Education:
08/2008 - 02/2014 : PhD, Electrical Communication Engineering
Indian Institute of Science, Bengaluru
Thesis: High-k Dielectrics for Metal-Insulator-Metal Capacitors
Advisors: Prof. Navakanta Bhat and Prof. S. Mohan09/2002 - 06/2006 : B.E., Electronics and Communication Engineering
Bangalore Institute of Technology, Bengaluru
affiliated to Visvesvaraya Technological University, BelagaviProfessional Experience:
07/2017 - present : Assistant Professor, Electrical Engineering
IIT Palakkad, Kerala09/2014 - 07/2017 : Post-doctoral fellow, Electrical Engineering
Technion-Israel Institute of Technology, Haifa, Israel
Advisor: Prof. Gadi Eisenstein03/2014 - 09/2014 : Research Associate, Dept. of ECE (in collaboration with CeNSE)
Indian Institute of Science, Bengaluru
in Nano-Devices and Sensors lab07/2006 - 07/2008 : Systems Engineer
IBM Global Business Services, Bengaluru -
Research
Research interests primarily lie in the area of semiconductor device fabrication and characterization.
Please have a look at the publications section, for more details.Research Grants
Project Title Funding Agency Duration Role Synthesis of layered transition metal oxides for optoelectronic applications SERB (POWER) 09/2022 - 09/2025 Co-PI
PI: Dr. T. H. ChoudhuryEngineering porous silicon for capacitive deionization SERB (POWER) 06/2022 - 06/2025 PI
Co-PI: Dr. T. H. ChoudhuryDesign & fabrication of inorganic electrochromic devices using layer engg. ISRO RESPOND 12/2021 - 12/2023 PI
Collab: Dr. T. H. ChoudhuryDesign & fabrication of an LED-based solar simulator with integrated electrical & optical measurement capability DST (SERD) 04/2021 - 04/2024 Multi-functional optically-sensitive devices with high efficiencies using perovskites SERB (SRG) 01/2020 - 01/2022 PI
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Teaching
EE5518 / EE3506 Nanoelectronic Devices : [Jan-Apr 2023, 2022, 2021, 2020, 2019, 2018]
EE3010 / EE3001 Solid-State Devices : [Aug-Nov 2022, 2020, 2019, 2018, 2017]
EE5009 Nanoelectronics for Circuits and Systems: [Aug-Nov 2022, 2021, 2020]
EE5526 Principles and Design of MEMS : [Aug-Dec 2021]
EE5510 Fundamentals of Semiconductor Devices: [Aug-Nov 2019]
EE2030 Electrical and Magnetic Circuits : [Aug-Nov 2018]
EE5606 Micro and Nanoscale Devices Laboratory: [Jan-Apr 2023]
EE2160 / EE2701 CAD Laboratory : [Jan-Apr 2020, 2019, 2018]
EE3703 Analog Circuits Laboratory : [Aug-Nov 2017]
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Research Group
PhD Students:
Renjith Sasikumar (joined in Jan 2018)
Alankrith S J (joined in Jun 2022)
Sriram S (joined in Jan 2023)
Susomon Dutta (joined in Jan 2023)
MS Students:
Kumudini Ganesh (joined in Jul 2019)
Mejo A J (joined in Jan 2020)
Sreejyothi Sankararaman (joined in Jul 2020)
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Additional Information
TitleSponsored ProjectsDescription
Project Title Funding Agency Duration Role Synthesis of layered transition metal oxides for optoelectronic applications SERB (POWER) Sep 2022 - Sep 2025 Co-PI
PI: Dr. T. H. ChoudhuryEngineering porous silicon for capacitive deionization SERB (POWER) Jun 2022 - Jun 2025 PI
Co-PI: Dr. T. H. ChoudhuryDesign and fabrication of inorganic electrochromic devices using layer engg. ISRO RESPOND Dec 2021 - Dec 2023 PI
Collaborator: Dr. T. H. ChoudhuryDesign and fabrication of an LED-based solar simulator with integrated electrical and optical measurement capability Solar Energy Research and Development (SERD), DST Apr 2021 - Apr 2024 Co-PI
with AA (PI), ARS (Co-PI)
Industry Collaborator: HolmarcMulti-functional optically-sensitive devices with high efficiencies using perovskites Start-up Research Grant (SERB) Jan 2020 - Jan 2022 PI
TitlePatentsDescription- Method of eliminating pull-in instability and hybrid MEMS actuator incorporating the method
[R. T. Raman, R. Padmanabhan, and A. Ajoy] Indian Patent Number 398690, granted Jun 2022.
- Method of eliminating pull-in instability and hybrid MEMS actuator incorporating the method
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Publications
M. A. Johnny, S. Suresh, T. H. Choudhury, and R. Padmanabhan2022 IEEE Nanotechnology Materials and Devices Conference (NMDC) 17-20 (2022)K. Ganesh and R. PadmanabhanProc. 22nd IEEE International Conference on Nanotechnology (IEEE NANO) 496-499 (2022)R. T. Raman, R. Padmanabhan, and A. AjoyIEEE Trans. Electron Devices 69 (9) 5162-5169 (2022)R. T. Raman, J. Shibu, R. Padmanabhan, and A. AjoyIEEE Trans. Electron Devices 69 (6) 3359-3366 (2022)S. Sankararaman, K. Balasubramanian, and R. PadmanabhanXXI International Workshop on Physics of Semiconductor Devices (2021)S. Verma, T. H. Choudhury, and R. Padmanabhan2021 IEEE 16th Nanotechnology Materials and Devices Conference (NMDC) 1-4 (2021)V. Sharma and R. Padmanabhan2021 IEEE 16th Nanotechnology Materials and Devices Conference (NMDC) 1-5 (2021)K. Ganesh and R. Padmanabhan2021 IEEE 16th Nanotechnology Materials and Devices Conference (NMDC) 1-5 (2021)R. Sasikumar, A. Ajoy, and R. PadmanabhanIEEE Trans. Nanotechnol. 20 912-921 (2021)S. Sankararaman, K. Balasubramanian, and R. PadmanabhanCLEO: Science and Innovations JW1A. 183 (2021)R. T. Raman, A. Ajoy, and R. Padmanabhan2021 Virtual MRS Spring Meeting (2021)R. Sasikumar and R. Padmanabhan2020 5th IEEE Int. Conf. Emerging Electron. 1-4 (2020)K. Ganesh and R. Padmanabhan2020 5th IEEE Int. Conf. Emerging Electron. 1-4 (2020)V. Sharma, S. Saini, and R. Padmanabhan2020 5th IEEE Int. Conf. Emerging Electron. 1-4 (2020)R. T. Raman, A. Ajoy, and R. PadmanabhanIEEE Trans. Electron Devices 67 (10) 4413-4420 (2020)R. Sasikumar, A. Ajoy, and R. PadmanabhanProc. 20th IEEE International Conference on Nanotechnology (IEEE NANO) 159-163 (2020)S. Saini, I. J. Lalan, and R. Padmanabhan20th International Workshop on the Physics of Semiconductor Devices (2019)R. Sasikumar, A. Ajoy, and R. Padmanabhan20th International Workshop on the Physics of Semiconductor Devices (2019)R. Padmanabhan, O. Sorias, O. Eyal, V. Mikhelashvili, M. Orenstein, and G. EisensteinIEEE Trans. Nanotechnol. 16 (5) 778-783 (2017)V. Mikhelashvili, G. Ankonina, Y. Kauffmann, G. Atiya, W. D. Kaplan, R. Padmanabhan, and G. EisensteinJ. Appl. Phys. 121 (21) 214504:1-7 (2017)V. Mikhelashvili, R. Padmanabhan, and G. EisensteinJ. Appl. Phys. 122 (3) 034503:1-9 (2017)V. Mikhelashvili, R. Padmanabhan, B. Meyler, S. Yofis, and G. EisensteinJ. Appl. Phys. 120 (22) 224502:1-9 (2016)R. Padmanabhan, O. Sorias, O. Eyal, V. Mikhelashvili, M. Orenstein, and G. EisensteinIEEE Nanotechnology Materials and Devices Conference (NMDC) 2016 (2016)R. Padmanabhan, S. Mohan, Y. Morozumi, S. Kaushal, and N. BhatIEEE Trans. Electron Devices 63 (10) 3928-3935 (2016)V. Mikhelashvili, B. Meyler, S. Yofis, R. Padmanabhan, and G. EisensteinAppl. Phys. Lett. 108 (25) 253504:1-5 (2016)R. Padmanabhan, O. Eyal, B. Meyler, S. Yofis, G. Atiya, W. D. Kaplan, V. Mikhelashvili, and G. EisensteinIEEE Trans. Nanotechnol. 15 (3) 492-498 (2016)V. Mikhelashvili, R. Padmanabhan, B. Meyler, S. Yofis, G. Atiya, Z. Cohen-Hyams, S. Weindling, G. Ankonina, J. Salzman, W. D. Kaplan, and G. EisensteinJ. Appl. Phys. 118 (13) 134504:1-11 (2015)R. Padmanabhan, V. Mikhelashvili, B. Meyler, S. Yofis, S. Weindling, J. Salzman, and G. EisensteinProc. 15th IEEE International Conference on Nanotechnology (IEEE NANO) 1235-1238 (2015)R. Padmanabhan, N. Bhat, S. Mohan, Y. Morozumi, and S. KaushalProc. Int. Conf. IC Design Technol. 1-4 (2014)R. Padmanabhan, N. Bhat, and S. MohanProc. 17th Int. Workshop Phys. Semiconductor Devices, Environ. Sci. Eng. 37-39 (2014)R. Padmanabhan, N. Bhat, S. Mohan, Y. Morozumi, and S. KaushalProc. Mater. Res. Soc. Symp. 1561 (2013)R. Padmanabhan, N. Bhat, and S. MohanIEEE Trans. Electron Devices 60 (5) 1523-1528 (2013)R. Padmanabhan, N. Bhat, S. MohanProc. IEEE Int. Conf. Emerging Electron. 1-4 (2012)R. Padmanabhan, N. Bhat, and S. MohanIEEE Trans. Electron Devices 59 (5) 1364-1370 (2012)
